The effects of doping in the multiquantum well (MQW) active region on the properties of InP-based long wavelength deep ridge transistor lasers (TLs) are numerically studied. Doping in the MQWs is shown to lead to a decrease of the slope efficiency and a notable increase of the current gain of the TLs. which makes MQW doping a useful tool for facilitating the design of TLs. When there ... https://unitedssports.shop/product-category/accessories-bags-gym/